Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.
Identifieur interne : 000078 ( Main/Exploration ); précédent : 000077; suivant : 000079Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.
Auteurs : RBID : pubmed:24380376Abstract
In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
DOI: 10.1186/1556-276X-9-1
PubMed: 24380376
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.</title><author><name sortKey="Liou, Jian Chiun" uniqKey="Liou J">Jian-Chiun Liou</name></author><author><name sortKey="Diao, Chien Chen" uniqKey="Diao C">Chien-Chen Diao</name></author><author><name sortKey="Lin, Jing Jenn" uniqKey="Lin J">Jing-Jenn Lin</name></author><author><name sortKey="Chen, Yen Lin" uniqKey="Chen Y">Yen-Lin Chen</name></author><author><name sortKey="Yang, Cheng Fu" uniqKey="Yang C">Cheng-Fu Yang</name><affiliation wicri:level="1"><nlm:affiliation>Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 82151, Taiwan. cfyang@nuk.edu.tw.</nlm:affiliation><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 82151</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1186/1556-276X-9-1</idno><idno type="RBID">pubmed:24380376</idno><idno type="pmid">24380376</idno><idno type="wicri:Area/Main/Corpus">000230</idno><idno type="wicri:Area/Main/Curation">000230</idno><idno type="wicri:Area/Main/Exploration">000078</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">24380376</PMID><DateCreated><Year>2014</Year><Month>01</Month><Day>09</Day></DateCreated><DateCompleted><Year>2014</Year><Month>01</Month><Day>09</Day></DateCompleted><DateRevised><Year>2014</Year><Month>01</Month><Day>27</Day></DateRevised><Article PubModel="Electronic"><Journal><ISSN IssnType="Print">1931-7573</ISSN><JournalIssue CitedMedium="Print"><Volume>9</Volume><Issue>1</Issue><PubDate><Year>2014</Year></PubDate></JournalIssue><Title>Nanoscale research letters</Title><ISOAbbreviation>Nanoscale Res Lett</ISOAbbreviation></Journal><ArticleTitle>Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.</ArticleTitle><Pagination><MedlinePgn>1</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1186/1556-276X-9-1</ELocationID><Abstract><AbstractText>In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Liou</LastName><ForeName>Jian-Chiun</ForeName><Initials>JC</Initials></Author><Author ValidYN="Y"><LastName>Diao</LastName><ForeName>Chien-Chen</ForeName><Initials>CC</Initials></Author><Author ValidYN="Y"><LastName>Lin</LastName><ForeName>Jing-Jenn</ForeName><Initials>JJ</Initials></Author><Author ValidYN="Y"><LastName>Chen</LastName><ForeName>Yen-Lin</ForeName><Initials>YL</Initials></Author><Author ValidYN="Y"><LastName>Yang</LastName><ForeName>Cheng-Fu</ForeName><Initials>CF</Initials><Affiliation>Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 82151, Taiwan. cfyang@nuk.edu.tw.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>01</Month><Day>01</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nanoscale Res Lett</MedlineTA><NlmUniqueID>101279750</NlmUniqueID><ISSNLinking>1556-276X</ISSNLinking></MedlineJournalInfo><OtherID Source="NLM">PMC3895740</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>10</Month><Day>31</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2013</Year><Month>11</Month><Day>27</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>1</Month><Day>1</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>1</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>1</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>1</Month><Day>2</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">1556-276X-9-1</ArticleId><ArticleId IdType="doi">10.1186/1556-276X-9-1</ArticleId><ArticleId IdType="pubmed">24380376</ArticleId><ArticleId IdType="pmc">PMC3895740</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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